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Türkçe - İngilizce
(Nükleer Bilimler) ion implantation
The process by which dopants are introduced in exact quantities into silicon A stream of charged particles (called ions) of phosphorus, arsenic, or boron is created and then directed at a silicon wafer at a precisely controlled velocity (energy) In this way both the concentration and depth of the dopant can be controlled back to top
Process of adding materials to the surface of a wafer that will conduct electricity 3 26
A means for adding dopants to semiconductor material Charged atoms (ions) of elements such as boron, phosphorus, or arsenic are accelerated by an electric field into the material Useful for very shallow (<1µ) and precise distributions of dopants
iyon ekme